IDB18E120ATMA1

PART NUMBERIDB18E120ATMA1Send your quantity and requirements for a confirmed quote.
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IDB18E120ATMA1 — Manufacturer package reference image, PG-TO263-3-2
Manufacturer package reference image

The 1200 V, 18 A emitter controlled silicon power diode in a D2PAK TO-263 package displays excellent softness and VF behaviour and is qualified with a T <sub>j(max)</sub> of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Key Specifications

Complete manufacturer part numberIDB18E120ATMA1
ManufacturerInfineon Technologies
DescriptionThe 1200 V, 18 A emitter controlled silicon power diode in a D2PAK TO-263 package displays excellent softness and VF behaviour and is qualified with a T <sub>j(max)</sub> of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.
Package / casePG-TO263-3-2
Product categorySilicon diodes
Pins3
Operating Temperature (manufacturer catalog)-55 °C to 150 °C
IF (manufacturer family record)18 A
Irrm (manufacturer family record)20.2 A
Pin Count (manufacturer family record)3 Pins
Qrr (manufacturer family record)1880 nC
trr (manufacturer family record)195 ns
VF (manufacturer family record)1.65 V
RthJC maximum (manufacturer family record)1.1 K/W
In stockContact for availability
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Manufacturer package reference image for PG-TO263-3-2. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.

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Part Number: IDB18E120ATMA1
Manufacturer: Infineon

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