Manufacturer package reference image
CoolSiC™ JFET 1200 V in a Q-DPAK top-side-cooled package. Its ultra-low 2.6 mΩ typical RDS minimizes conduction losses in continuously conducting solid-state power-distribution and protection applications. High-current avalanche and surge-current ruggedness, linear-mode capability and overload operation up to a junction temperature of 200°C support demanding protection functions.
Key Specifications
| Complete manufacturer part number | IJCQ120RM26J1XTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CoolSiC™ JFET 1200 V in a Q-DPAK top-side-cooled package. Its ultra-low 2.6 mΩ typical RDS minimizes conduction losses in continuously conducting solid-state power-distribution and protection applications. High-current avalanche and surge-current ruggedness, linear-mode capability and overload operation up to a junction temperature of 200°C support demanding protection functions. |
| Package / case | PG-HDSOP-22-3 |
| Product category | Silicon Carbide JFET discretes |
| Pins | 22 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 2.6 mΩ |
| VDS maximum (manufacturer family record) | 1200 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-HDSOP-22-3. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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