Manufacturer package reference image
The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
Key Specifications
| Complete manufacturer part number | IMW40R011M2HXKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers. |
| Package / case | PG-TO247-3-40 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 3 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 11 mΩ |
| VDS maximum (manufacturer family record) | 400 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-TO247-3-40. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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