Manufacturer package reference image
IQE046N08LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance R<sub>DS(on) </sub>at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE046N08LM5CGSC is targeted for high power density and performance SMPS products commonly found in telecom and data servers
Key Specifications
| Complete manufacturer part number | IQE046N08LM5CGSCATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | IQE046N08LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance R<sub>DS(on) </sub>at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE046N08LM5CGSC is targeted for high power density and performance SMPS products commonly found in telecom and data servers |
| Package / case | PG-WHTFN-9-1 |
| Product category | N-channel MOSFETs |
| Pins | 9 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| QG [typ @4.5V] (manufacturer family record) | 19 nC |
| QG [typ @10V] (manufacturer family record) | 38 nC |
| VGS(th) (manufacturer family record) | 1.7 V |
| VGS(th) minimum (manufacturer family record) | 1.1 V |
| RDS (on) maximum [@10V] (manufacturer family record) | 4.6 mΩ |
| VDS maximum (manufacturer family record) | 80 V |
| VGS(th) maximum (manufacturer family record) | 2.3 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-WHTFN-9-1. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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