DigiKey package reference image
The AIMW120R035M1H is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost decrease of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.
Key Specifications
| Complete manufacturer part number | AIMW120R035M1HXKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The AIMW120R035M1H is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost decrease of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design. |
| Package / case | PG-TO247-3-41 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 3 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| Polarity (manufacturer catalog) | N |
| RDS (on) (manufacturer catalog) | 35 mΩ |
| Technology (manufacturer catalog) | CoolSiC™ G1 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 35 mΩ |
| VDS maximum (manufacturer family record) | 1200 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
DigiKey package reference image for PG-TO247-3-41. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
Request a Quote
Why Source from CHIPER
- Quality inspection — every part is visually inspected and authenticity verified before shipment.
- Traceability — batch and date-code information provided on request.
- Shipping — worldwide shipping with major couriers (DHL / FedEx / UPS), fully insured.
- Payment — flexible terms including bank transfer (T/T) in major currencies.
- After-sales — dedicated support and RMA handling for every order.
Contact: xiaoqi@chiper-components.com · +86 18570555062