Infineon package reference image
CoolSiC™ 1200 V boost stage combining a 39.6 mOhm CoolSiC™ MOSFET and 30 A Schottky diode in a top-side cooled Q-DPAK package with dual die-pad configuration. Designed for industrial power conversion, it offers simplified assembly, excellent thermal performance, and high power density. The optimized layout enables improved efficiency, superior thermal management, and reduced system cost.
Key Specifications
| Complete manufacturer part number | IMSQ120R040M2HBXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CoolSiC™ 1200 V boost stage combining a 39.6 mOhm CoolSiC™ MOSFET and 30 A Schottky diode in a top-side cooled Q-DPAK package with dual die-pad configuration. Designed for industrial power conversion, it offers simplified assembly, excellent thermal performance, and high power density. The optimized layout enables improved efficiency, superior thermal management, and reduced system cost. |
| Package / case | PG-HDSOP-16-221 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 16 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| Ciss (manufacturer catalog) | 1310 pF |
| Coss (manufacturer catalog) | 55 pF |
| Encryption (manufacturer catalog) | No |
| QG (manufacturer catalog) | 36 nC |
| RDS (on) (manufacturer catalog) | 39.6 mΩ |
| Switch Type (manufacturer catalog) | CoolSiC™ MOSFET |
| Ciss (manufacturer family record) | 1310 pF |
| Coss (manufacturer family record) | 55 pF |
| Pin Count (manufacturer family record) | 16 Pins |
| QC (manufacturer family record) | 8.8 nC |
| QG (manufacturer family record) | 36 nC |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 39.6 mΩ |
| RthJA maximum (manufacturer family record) | 62 K/W |
| RthJC maximum (manufacturer family record) | 0.52 K/W |
| VDS maximum (manufacturer family record) | 1200 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Original manufacturer package appearance reference. Sixteen leads arranged in four groups of four with central gaps in each row. Two separate exposed heatsink regions are divided by a central molded groove; opposite face has four circular recesses. Both surfaces visible in original and match own -221 outline. Two heatsinks do not add nominal pins. Original public manufacturer appearance reference, not a stock-lot photograph. Only exact full OPNs/full package suffix and physical construction listed are qualified. Metal pads/heatsinks are not extra nominal pins. Top markings, electrical configuration and current-lot appearance are not guaranteed. Every own datasheet literal association verified against unique exact manufacturer catalog OPN row; no all-PDF/electrical revalidation claim. Original appearance bytes/native dimensions retained without crop/resize/enlargement/re-encoding/generation. Mechanical PDF page render is independent read-only evidence, never a primary image candidate. Original generic CoolSiC/TOLT/Q-DPAK family text remains unchanged; not a promise of those exact markings for every OPN. Exact complete OPN, full mechanical suffix, nominal terminals and own frozen datasheet define this association; no electrical interchangeability or unshown-surface inference.
Infineon package reference image for PG-HDSOP-16-221. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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