Manufacturer package reference image
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Key Specifications
| Complete manufacturer part number | BAT1504WH6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. |
| Package / case | PG-SOT323-3-1 |
| Product category | RF mixer and detector Schottky diode |
| Pins | 3 |
| Operating temperature Top (manufacturer datasheet) | -55 °C to 150 °C |
| Encryption (manufacturer catalog) | No |
| Technology (manufacturer catalog) | Si-Schottky |
| C @VR=0V (manufacturer family record) | 0.3 pF |
| VF (manufacturer family record) | 0.25 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Manufacturer source fields matched to the complete ordering code. Historical source captures may be used; this does not confirm current availability. Temperature scope follows the cited record. Package reference image is not a stock-lot photograph. Consult the datasheet for electrical limits and test conditions.
Manufacturer package reference image for PG-SOT323-3-1. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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