Manufacturer package reference image
With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
Key Specifications
| Complete manufacturer part number | AIMBG120R030M1XTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications. |
| Package / case | PG-TO263-7-12 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 7 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| Ciss (manufacturer family record) | 1738 pF |
| Coss (manufacturer family record) | 82 pF |
| QG (manufacturer family record) | 57 nC |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 30 mΩ |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Manufacturer source fields matched to the complete ordering code. Historical source captures may be used; this does not confirm current availability. Temperature scope follows the cited record. Package reference image is not a stock-lot photograph. Consult the datasheet for electrical limits and test conditions.
Manufacturer package reference image for PG-TO263-7-12. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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