Infineon package reference image
Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 750 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.
Key Specifications
| Complete manufacturer part number | AIMZA75R060M2HXKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 750 V CoolSiC™ MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs. |
| Package / case | PG-TO247-4-16 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 4 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| Polarity (manufacturer catalog) | N |
| RDS (on) (manufacturer catalog) | 60 mΩ |
| Switch Type (manufacturer catalog) | MOSFET |
| Technology (manufacturer catalog) | CoolSiC™ G2 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 60 mΩ |
| VDS maximum (manufacturer family record) | 750 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Complete ordering code, package and nominal terminal count retain their manufacturer evidence. Confirm electrical pin functions, shared terminals and temperature scope in the linked datasheet. The image is an original Infineon manufacturer package appearance reference, not a current-stock photograph or a guarantee of top markings. No certification or electrical interchangeability is inferred from the image.
Infineon package reference image for PG-TO247-4-16. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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