AIMZHN120R010M1TXKSA1

Infineon package reference image

With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Key Specifications

Technical documentation and image source

Original manufacturer package appearance reference. Four complete straight through-hole leads and side mounting recesses; separated first lead and three closer leads. Rear exposed diepad surrounds insulated mounting-hole collar. Original front/rear and own -14 outline agree, distinct from -17 body length and lead shoulder construction. Original manufacturer public package appearance rendering, not a stock-lot photograph. Scope limited to the complete OPNs and exact mechanical suffix listed, with actual lead/pad construction and mechanical nominal/tolerance evidence; no unchecked cross-suffix expansion. Top markings, internal electrical functions and present-stock appearance are not guaranteed. Exact own datasheet literal association checked for each unique raw complete OPN; no claim that every full PDF was independently re-read. Original bytes and native dimensions retained; no crop, resize, enlargement, generation or re-encoding. Complete full ordering code, exact package, nominal terminals, own frozen datasheet and independent mechanical evidence define this image association. No electrical interchangeability or certification is inferred.

• Datasheet
• Manufacturer product information
• Image source — AIMZHN120R010M1TXKSA1

Infineon package reference image for PG-TO247-4-14. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.