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58,734 listed part numbers. Price and lead time are confirmed by quotation.
- DS1100Z-75+T&RSmall-Outline IC Narrow (0.15in)Manufacturer-listed semiconductor ordering code DS1100Z-75+T&RView specifications & request quote →
- DS1110E-100+Thin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110E-100+View specifications & request quote →
- DS1110E-50+Thin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110E-50+View specifications & request quote →
- DS1110E-500+Thin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110E-500+View specifications & request quote →
- DS1110LE-100+Thin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110LE-100+View specifications & request quote →
- DS1110LE-100+T&RThin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110LE-100+T&RView specifications & request quote →
- DS1110LE-200+Thin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110LE-200+View specifications & request quote →
- DS1110LE-500+Thin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110LE-500+View specifications & request quote →
- DS1110LE-500+T&RThin Shrink Small-Outline PackageManufacturer-listed semiconductor ordering code DS1110LE-500+T&RView specifications & request quote →
- DS1110S-100+Small-Outline IC Wide (0.3in)Manufacturer-listed semiconductor ordering code DS1110S-100+View specifications & request quote →
- DS1110S-125+Small-Outline IC Wide (0.3in)Manufacturer-listed semiconductor ordering code DS1110S-125+View specifications & request quote →
- DS1110S-250+Small-Outline IC Wide (0.3in)Manufacturer-listed semiconductor ordering code DS1110S-250+View specifications & request quote →
- DS1110S-50+Small-Outline IC Wide (0.3in)Manufacturer-listed semiconductor ordering code DS1110S-50+View specifications & request quote →
- DS1110S-500+Small-Outline IC Wide (0.3in)Manufacturer-listed semiconductor ordering code DS1110S-500+View specifications & request quote →
- Image on requestDS1210+To be confirmedMEMORY CTRL CHIP NONVOLATILE12,635 pcs in stockView specifications & request quote →
- Image on requestDS1210S+To be confirmedMEMORY CTRL CHIP NONVOLATILE4,566 pcs in stockView specifications & request quote →
- Image on requestDS1210S+TRLTo be confirmedMEMORY CTRL CHIP NONVOLATILE1,231 pcs in stockView specifications & request quote →
- Image on requestDS1210S/T&R/To be confirmedMEMORY CTRL8,258 pcs in stockView specifications & request quote →
- Image on requestDS1216CTo be confirmedMEMORY CTRL SMARTWATCH RAM2,782 pcs in stockView specifications & request quote →
- Image on requestDS1216DTo be confirmedMEMORY CTRL SMARTWATCH RAM9,581 pcs in stockView specifications & request quote →
- DS1220AB-100IND+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AB-150+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AB-150IND+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AB-200+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AB-200IND+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AD-100+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AD-100IND+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AD-120+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AD-150+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AD-200+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1220AD-200IND+Encapsulated Dual-In-Line ModuleThe DS1220AB and DS1220AD 16k Nonvolatile (NV) SRAMs are 16,384-bit, fully static, NV SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out-of-toView specifications & request quote →
- DS1225AB-150IND+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AB-170+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AB-200+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AB-200IND+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AB-70+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AB-70IND+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AB-85+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-150+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-150IND+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-170+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-200+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-200IND+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-70+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-70IND+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1225AD-85+Encapsulated Dual-In-Line ModuleThe DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile (NV) SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condView specifications & request quote →
- DS1230AB-100+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230AB-120+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230AB-120IND+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230AB-150+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230AB-200+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230AB-70+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230AB-70IND+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230AB-85+Encapsulated Dual-In-Line ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230ABP-100+PowerCap ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230ABP-70+PowerCap ModuleThe DS1230 256k Nonvolatile (NV) SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolView specifications & request quote →
- DS1230W-100+Encapsulated Dual-In-Line ModuleThe DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance cView specifications & request quote →
- DS1230W-100IND+Encapsulated Dual-In-Line ModuleThe DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance cView specifications & request quote →
- DS1230W-150+Encapsulated Dual-In-Line ModuleThe DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance cView specifications & request quote →
- DS1230WP-100+PowerCap ModuleThe DS1230W 3.3V 256k NV SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance cView specifications & request quote →
SELECTION CONTEXT
Explore the details
What We Supply
Precision ADCs and DACs, instrumentation and operational amplifiers, digital isolators, analog switches and multiplexers, voltage references and power-management ICs.
How to Choose
- Choose an ADC by resolution, channels and sample rate.
- Choose a DAC by resolution and output (voltage or 4-20 mA).
- Choose an amplifier by offset, bandwidth and supply.
- Confirm restricted-availability parts by RFQ before ordering.
Popular ADI Series
- AD7xxx / AD9xxx — precision SAR ADCs.
- AD5xxx / AD7xxx — voltage and 4-20 mA DACs.
- ADuM — digital isolators.
- AD8xxx — precision and instrumentation amplifiers.
Applications
- Precision measurement and instrumentation
- Industrial process control
- Isolated and mixed-signal systems
- Power and battery management
Selection Guide
Analog Devices is the first choice for precision and mixed-signal designs. High-resolution ADCs and DACs serve measurement and process control, while isolators and switches handle mixed-signal and safety-critical signal paths. Match resolution, channels and sample rate to your signal, and confirm restricted-availability parts by RFQ before ordering.
How to Order
To request a quote, open any part number below and use the RFQ form with your target quantity, target price and country. We confirm availability, lead time and date code before you commit. For volume or multi-line BOM requests, upload your bill of materials on the Contact page.
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