Manufacturer package outline drawing - not a product photo
CY7C2670KV18-450BZI is a 144-Mbit (4 M × 36) DDR II+ synchronous pipelined SRAM with two-word burst architecture and 2.5-cycle read latency. It runs up to 450 MHz clock with double data rate transfers (up to 900 MT/s) and includes echo clocks (CQ/CQ) plus QVLD for data capture. Core VDD is 1.7 V to 1.9 V and VDDQ is 1.4 V to VDD. It comes in a 165-ball FBGA package for industrial range.
Key Specifications
| Complete manufacturer part number | CY7C2670KV18-450BZI |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY7C2670KV18-450BZI is a 144-Mbit (4 M × 36) DDR II+ synchronous pipelined SRAM with two-word burst architecture and 2.5-cycle read latency. It runs up to 450 MHz clock with double data rate transfers (up to 900 MT/s) and includes echo clocks (CQ/CQ) plus QVLD for data capture. Core VDD is 1.7 V to 1.9 V and VDDQ is 1.4 V to VDD. It comes in a 165-ball FBGA package for industrial range. |
| Package / case | P-BGA-165-802 |
| Product category | Dual data rate (DDR) sync SRAMs |
| Pins | 165 |
| Operating Temperature (manufacturer catalog) | -40 °C to 85 °C |
| Architecture (manufacturer catalog) | DDR-II+ CIO, ODT |
| Density (manufacturer catalog) | 144 MBit |
| ECC (manufacturer catalog) | N |
| Frequency (manufacturer catalog) | 450 MHz |
| Interfaces (manufacturer catalog) | Parallel |
| On-Die Termination (manufacturer catalog) | Y |
| Operating Voltage (manufacturer catalog) | 1.7 to 1.9 V |
| Organization (X x Y) (manufacturer catalog) | 4Mb x 36 |
| Density (manufacturer family record) | 144 MBit |
| Frequency (manufacturer family record) | 450 MHz |
| Peak Reflow Temp (manufacturer family record) | 260 °C |
| Read Latency (Cycles) (manufacturer family record) | 2.5 |
| Family Name (Flip Electronics public specification) | CY7C2670KV18 |
| Memory Size (Flip Electronics public specification) | 144Mbit |
| Address Bus Width (Flip Electronics public specification) | 21Bits |
| Number of Bits per Word (Flip Electronics public specification) | 36Bits |
| Number of Words (Flip Electronics public specification) | 4Mword |
| Timing (Flip Electronics public specification) | Synchronous |
| Number of I O Lines (Flip Electronics public specification) | 36 |
| SRAM Type (Flip Electronics public specification) | DDR II+ |
| Number of Burst (Flip Electronics public specification) | 2 |
| Number of Ports (Flip Electronics public specification) | Single Port |
| Parameter source (third-party) | https://www.flipelectronics.com/Product/CY7C2670KV18-450BZI-42345 |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Additional parameters are from Flip Electronics public product specifications matched to the complete ordering code and manufacturer. These fields are third-party data, not manufacturer-confirmed. Original fields and commercial terms are preserved.
Manufacturer package outline drawing - not a product photo for P-BGA-165-802. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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