The FM24C04B-G is a 4-Kbit ferroelectric random access memory (F-RAM) organized as 512 × 8 bits and accessed via I2C. It features NoDelay™ writes at bus speed, eliminating EEPROM write delays. Supporting 100 trillion (1014) read/write cycles and 151-year data retention at 65°C, it operates from 4.5 V to 5.5 V with 100 μA active current at 100 kHz and 4 μA standby. AEC-Q100 Grade 3 qualification and –40°C to +85°C range suit frequent, rapid-write applications.
Key Specifications
| Complete manufacturer part number | FM24C04B-G |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The FM24C04B-G is a 4-Kbit ferroelectric random access memory (F-RAM) organized as 512 × 8 bits and accessed via I2C. It features NoDelay™ writes at bus speed, eliminating EEPROM write delays. Supporting 100 trillion (1014) read/write cycles and 151-year data retention at 65°C, it operates from 4.5 V to 5.5 V with 100 μA active current at 100 kHz and 4 μA standby. AEC-Q100 Grade 3 qualification and –40°C to +85°C range suit frequent, rapid-write applications. |
| Package / case | PG-DSO-8-802 |
| Product category | EEPROMs |
| Pins | 8 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 1,737 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.
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