IMBG65R030M1HXTMA1

PART NUMBERIMBG65R030M1HXTMA1Send your quantity and requirements for a confirmed quote.
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IMBG65R030M1HXTMA1 — Manufacturer package reference image, PG-TO263-7-12
Manufacturer package reference image

CoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R030M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in high power applications. It is optimized to enable max system performance, compactness and reliability.

Key Specifications

Complete manufacturer part numberIMBG65R030M1HXTMA1
ManufacturerInfineon Technologies
DescriptionCoolSiC™ MOSFET technology leverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R030M1H CoolSiC™ MOSFET 650V is a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in high power applications. It is optimized to enable max system performance, compactness and reliability.
Package / casePG-TO263-7-12
Product categorySilicon carbide MOSFET discretes
Pins7
Operating Temperature (manufacturer catalog)-55 °C to 175 °C
RDS (on) [@ Tj = 25°C] (manufacturer family record)30 mΩ
VDS maximum (manufacturer family record)650 V
In stockContact for availability
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Manufacturer package reference image for PG-TO263-7-12. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.

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Part Number: IMBG65R030M1HXTMA1
Manufacturer: Infineon

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