Manufacturer package reference image
The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
Key Specifications
| Complete manufacturer part number | IMBG75R007M2HXTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost. |
| Package / case | PG-TO263-7-12 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 7 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 7 mΩ |
| RthJC maximum (manufacturer family record) | 0.23 K/W |
| VDS maximum (manufacturer family record) | 750 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-TO263-7-12. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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