Manufacturer package reference image
The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers.
Key Specifications
| Complete manufacturer part number | IMDQ75R007M2HXTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers. |
| Package / case | PG-HDSOP-22-1 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 22 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 7 mΩ |
| RthJC maximum (manufacturer family record) | 0.19 K/W |
| VDS maximum (manufacturer family record) | 750 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-HDSOP-22-1. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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