Manufacturer package reference image
The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
Key Specifications
| Complete manufacturer part number | IMDQ75R020M1HXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ MOSFET 750 V G1 leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling a simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost. |
| Package / case | PG-HDSOP-22-1 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 22 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 20 mΩ |
| VDS maximum (manufacturer family record) | 750 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-HDSOP-22-1. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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