Infineon package reference image
CoolSIC™ MOSFET 650 V, 30 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 30 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous designs. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, makes the 30 mΩ product suitable for high power designs. It ideally fits the emerging Totem Pole PFC topology in high power systems, as well as high power DC-DC or AC-DC stages, with demanding power density targets.
Key Specifications
| Complete manufacturer part number | IMT65R030M1HXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CoolSIC™ MOSFET 650 V, 30 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 30 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for numerous designs. The reduction of thermal impedance compared to D²PAK, together with the innovative .XT interconnect, makes the 30 mΩ product suitable for high power designs. It ideally fits the emerging Totem Pole PFC topology in high power systems, as well as high power DC-DC or AC-DC stages, with demanding power density targets. |
| Package / case | PG-HSOF-8-2 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 8 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| Polarity (manufacturer catalog) | N |
| RDS (on) (manufacturer catalog) | 30 mΩ |
| Switch Type (manufacturer catalog) | MOSFET |
| Technology (manufacturer catalog) | CoolSiC™ G1 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 30 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Complete ordering code, package and nominal terminal count retain their manufacturer evidence. Confirm electrical pin functions, shared terminals and temperature scope in the linked datasheet. The image is an original Infineon manufacturer package appearance reference, not a current-stock photograph or a guarantee of top markings. No certification or electrical interchangeability is inferred from the image.
Infineon package reference image for PG-HSOF-8-2. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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