Infineon package reference image
CoolSIC™ MOSFET 650 V, 260 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 260 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. This 260 mΩ product is suitable for specific high efficiency designs in low power systems, like home appliances or low power industrial drives. It allows optimizing the performance per $, in hard commuting half and full bridge topologies, as well as increasing the efficiency of systems adopting topologies like the emerging Totem Pole PFC.
Key Specifications
| Complete manufacturer part number | IMT65R260M1HXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CoolSIC™ MOSFET 650 V, 260 mΩ in TOLL package leverages the strengths of the Infineon SiC technology to enable higher density designs and higher switching frequency operations. The small form factor and low parasitic of TOLL allow for an efficient and effective usage of board space as well to drive the MOSFET at higher frequencies, reaching higher power density. CoolSIC™ MOSFET 650 V, 260 mΩ in TOLL package offering is complemented by the availability of TOLL also for CoolMOS™ and CoolGaN™, making it an appealing one stop shop option for various systems. This 260 mΩ product is suitable for specific high efficiency designs in low power systems, like home appliances or low power industrial drives. It allows optimizing the performance per $, in hard commuting half and full bridge topologies, as well as increasing the efficiency of systems adopting topologies like the emerging Totem Pole PFC. |
| Package / case | PG-HSOF-8-2 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 8 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| Polarity (manufacturer catalog) | N |
| RDS (on) (manufacturer catalog) | 260 mΩ |
| Switch Type (manufacturer catalog) | MOSFET |
| Technology (manufacturer catalog) | CoolSiC™ G1 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 260 mΩ |
| VDS maximum (manufacturer family record) | 650 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Complete ordering code, package and nominal terminal count retain their manufacturer evidence. Confirm electrical pin functions, shared terminals and temperature scope in the linked datasheet. The image is an original Infineon manufacturer package appearance reference, not a current-stock photograph or a guarantee of top markings. No certification or electrical interchangeability is inferred from the image.
Infineon package reference image for PG-HSOF-8-2. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
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