Manufacturer package reference image
The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.<br />Our SiC MOSFET in TO-247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency.
Key Specifications
| Complete manufacturer part number | IMZA120R030M1HXKSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in TO-247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic. CoolSiC™ MOSFETs are ideal for hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.<br />Our SiC MOSFET in TO-247 4-pin package reduces parasitic source inductance effects on the gate circuit enabling faster switching and increased efficiency. |
| Package / case | PG-TO247-4-8 |
| Product category | Silicon carbide MOSFET discretes |
| Pins | 4 |
| Operating Temperature (manufacturer catalog) | -55 °C to 175 °C |
| Ciss (manufacturer family record) | 2160 pF |
| Coss (manufacturer family record) | 99 pF |
| Pin Count (manufacturer family record) | 4 Pins |
| Qgd (manufacturer family record) | 15 nC |
| QG (manufacturer family record) | 52 nC |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 30 mΩ |
| RthJA maximum (manufacturer family record) | 62 K/W |
| RthJC maximum (manufacturer family record) | 0.55 K/W |
| VDS maximum (manufacturer family record) | 1200 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Manufacturer package reference image for PG-TO247-4-8. Confirm electrical pin functions in the datasheet. Actual lot appearance and top marking require current-lot confirmation.
Request a Quote
Why Source from CHIPER
- Quality inspection — every part is visually inspected and authenticity verified before shipment.
- Traceability — batch and date-code information provided on request.
- Shipping — worldwide shipping with major couriers (DHL / FedEx / UPS), fully insured.
- Payment — flexible terms including bank transfer (T/T) in major currencies.
- After-sales — dedicated support and RMA handling for every order.
Contact: xiaoqi@chiper-components.com · +86 18570555062