1EDI3035ASXUMA1
The EiceDRIVER™ gate driver 1EDI3035AS is a high-voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection.
Key Specifications
| Complete manufacturer part number | 1EDI3035ASXUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The EiceDRIVER™ gate driver 1EDI3035AS is a high-voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for high power switches, and DESAT protection. |
| Package / case | PG-DSO-20-91 |
| Product category | Semiconductor |
| Channels (manufacturer family record) | 1 |
| Output Current [Sink] (manufacturer family record) | 20 A |
| Output Current [Source] (manufacturer family record) | 20 A |
| Turn Off Propagation Delay (manufacturer family record) | 60 ns |
| Turn On Propagation Delay (manufacturer family record) | 60 ns |
| Voltage Class (manufacturer family record) | 1200 V |
| Input Vcc minimum (manufacturer family record) | 3 V |
| Input Vcc maximum (manufacturer family record) | 5.5 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.