2ED2104S06FXUMA1

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650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFET s and IGBT s.Based on our SOI-technology , the 2ED2104S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.

Key Specifications

Complete manufacturer part number2ED2104S06FXUMA1
ManufacturerInfineon Technologies
Description650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFET s and IGBT s.Based on our SOI-technology , the 2ED2104S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Package / casePG-DSO-8-90
Product categorySemiconductor
Channels (manufacturer family record)2
Fall Time (manufacturer family record)35 ns
Output Current [Source] (manufacturer family record)0.29 A
Output Current [Sink] (manufacturer family record)0.7 A
Rise Time (manufacturer family record)70 ns
Turn Off Propagation Delay (manufacturer family record)90 ns
Turn On Propagation Delay (manufacturer family record)90 ns
VBS UVLO [Off] (manufacturer family record)8 V
VBS UVLO [On] (manufacturer family record)8.9 V
VCC UVLO [Off] (manufacturer family record)8 V
VCC UVLO [On] (manufacturer family record)8.9 V
Voltage Class (manufacturer family record)650 V
Input Vcc minimum (manufacturer family record)10 V
Input Vcc maximum (manufacturer family record)20 V
Output Vbs maximum (manufacturer family record)25 V
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Lead timeTo be confirmed

Technical documentation and image source

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Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: 2ED2104S06FXUMA1
Manufacturer: Infineon Technologies
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