2EDL2504F65XUMA1
The 2EDL2504 is a 650 V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. This driver has cross-conduction prevention with built in interlock lock logic and fully integrated overcurrent protections. It is offered in DSO-8 package.
Key Specifications
| Complete manufacturer part number | 2EDL2504F65XUMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The 2EDL2504 is a 650 V half-bridge gate driver. Its Infineon thin-film-SOI technology provides excellent ruggedness and noise immunity. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. This driver has cross-conduction prevention with built in interlock lock logic and fully integrated overcurrent protections. It is offered in DSO-8 package. |
| Package / case | PG-DSO-8-70 |
| Product category | Semiconductor |
| Number of Outputs (manufacturer family record) | 2 |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.