2EDL5013U2DXTMA1

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Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on.

Key Specifications

Complete manufacturer part number2EDL5013U2DXTMA1
ManufacturerInfineon Technologies
DescriptionDrive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on.
Package / casePG-TSNP-12-5
Product categorySemiconductor
Channels (manufacturer family record)2
Fall Time (manufacturer family record)2.7 ns
Output Current [Source] (manufacturer family record)3 A
Output Current [Sink] (manufacturer family record)5 A
Rise Time (manufacturer family record)4.2 ns
Turn Off Propagation Delay (manufacturer family record)20 ns
Turn On Propagation Delay (manufacturer family record)20 ns
VBS UVLO [Off] (manufacturer family record)3.6 V
VBS UVLO [On] (manufacturer family record)3.8 V
Voltage Class (manufacturer family record)120 V
Input Vcc minimum (manufacturer family record)4.5 V
Input Vcc maximum (manufacturer family record)5.5 V
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Lead timeTo be confirmed

Technical documentation and image source

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Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: 2EDL5013U2DXTMA1
Manufacturer: Infineon Technologies
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