2N6849EWSA1
2N6849 is a high reliability, -100V, single, P-channel MOSFET in a TO-205AF package. It utilizes HEXFET MOSFET technology to achieve low on-state resistance, high transconductance, and superior reverse energy and diode recovery dv/dt capability. Ideal for power supplies, motor controls, choppers, audio amplifiers, and other high-energy pulse circuit applications.
Key Specifications
| Complete manufacturer part number | 2N6849EWSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | 2N6849 is a high reliability, -100V, single, P-channel MOSFET in a TO-205AF package. It utilizes HEXFET MOSFET technology to achieve low on-state resistance, high transconductance, and superior reverse energy and diode recovery dv/dt capability. Ideal for power supplies, motor controls, choppers, audio amplifiers, and other high-energy pulse circuit applications. |
| Package / case | M-TO205-3-950 |
| Product category | Semiconductor |
| Voltage Class (manufacturer family record) | 100 V |
| RDS (on) maximum [@25°C] (manufacturer family record) | 300 mΩ |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.