AIMBG120R160M1XTMA1
With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.
Key Specifications
| Complete manufacturer part number | AIMBG120R160M1XTMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications. |
| Package / case | PG-TO263-7-12 |
| Product category | MOSFETs |
| Pins | 7 |
| QG (manufacturer family record) | 14 nC |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 160 mΩ |
| Operating Temperature minimum (manufacturer family record) | -55 °C |
| Operating Temperature maximum (manufacturer family record) | 175 °C |
| RthJC maximum (manufacturer family record) | 1.42 K/W |
| VDS maximum (manufacturer family record) | 1200 V |
| Voltage Class maximum (manufacturer family record) | 1200 V |
| In stock | 12,950 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.