AUIRLR3110ZTRL
Designed for automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features include 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These attributes make it an efficient and reliable choice for automotive and various other applications.
Key Specifications
| Complete manufacturer part number | AUIRLR3110ZTRL |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Designed for automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features include 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These attributes make it an efficient and reliable choice for automotive and various other applications. |
| Package / case | PG-TO252-3-31 |
| Product category | Semiconductor |
| Qgd (manufacturer family record) | 15 nC |
| QG [typ @10V] (manufacturer family record) | 34 nC |
| VGS(th) minimum (manufacturer family record) | 1 V |
| QG maximum [typ @10V] (manufacturer family record) | 48 nC |
| RDS (on) maximum [@10V] (manufacturer family record) | 14 mΩ |
| RthJC maximum (manufacturer family record) | 1.05 K/W |
| VDS maximum (manufacturer family record) | 100 V |
| VGS(th) maximum (manufacturer family record) | 2.5 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.