BAT1502ELSE6327XTSA1
This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Key Specifications
| Complete manufacturer part number | BAT1502ELSE6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz. |
| Package / case | PG-TSSLP-2-3 |
| Product category | Semiconductor |
| C @VR=0V (manufacturer family record) | 0.2 pF |
| VF (manufacturer family record) | 0.25 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.