BAT2402LSE6327XTSA1
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz
Key Specifications
| Complete manufacturer part number | BAT2402LSE6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz |
| Package / case | PG-TSSLP-2-1 |
| Product category | Semiconductor |
| C @VR=0V (manufacturer family record) | 0.2 pF |
| VF (manufacturer family record) | 0.25 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.