BF999E6327HTSA1
Silicon N-Channel MOSFET Triode
Key Specifications
| Complete manufacturer part number | BF999E6327HTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Silicon N-Channel MOSFET Triode |
| Package / case | PG-SOT23-3-11 |
| Product category | Semiconductor |
| Cdss (manufacturer family record) | 1 pF |
| Cg1ss (manufacturer family record) | 2.5 pF |
| F (manufacturer family record) | 1 dB |
| Forward transconductance gfs (manufacturer family record) | 16 mS |
| Gate input capacitance Cg1ss (manufacturer family record) | 2.5 pF |
| gfs (manufacturer family record) | 16 mS |
| Gp (manufacturer family record) | 25 dB |
| Maximum Continuous Drain current ID (manufacturer family record) | 30 mA |
| Maximum Drain-source voltage Vds (manufacturer family record) | 20 V |
| Output capacitance Cdss (manufacturer family record) | 0.9 pF |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.