BFP196WNH6327XTSA1

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NPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.

Key Specifications

Complete manufacturer part numberBFP196WNH6327XTSA1
ManufacturerInfineon Technologies
DescriptionNPN silicon planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from Infineon long-term experience in RF components and combines ease-of-use to stable volumes production, at benchmark quality and reliability.
Package / casePG-SOT343-4-1
Product categorySemiconductor
fT (manufacturer family record)7.5 GHz
Ptot (manufacturer family record)700 mW
In stockContact for availability
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Lead timeTo be confirmed

Technical documentation and image source

The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: BFP196WNH6327XTSA1
Manufacturer: Infineon Technologies
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