BFP740ESDH6327XTSA1
The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).
Key Specifications
| Complete manufacturer part number | BFP740ESDH6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT). |
| Package / case | PG-SOT343-4-2 |
| Product category | Semiconductor |
| fT (manufacturer family record) | 45 GHz |
| OIP3 (manufacturer family record) | 25 dBm |
| OP1dB (manufacturer family record) | 10 dBm |
| Ptot (manufacturer family record) | 160 mW |
| Voltage Class (manufacturer family record) | 4.2 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.