BGA8V1BN6E6327XTSA1
The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to 3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2mA. In bypass mode the LNA provides an insertion loss of 5.3 dB.The BGA8V1BN6 is based upon Infineon Technologies B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).
Key Specifications
| Complete manufacturer part number | BGA8V1BN6E6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to 3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2mA. In bypass mode the LNA provides an insertion loss of 5.3 dB.The BGA8V1BN6 is based upon Infineon Technologies B9HF Silicon Germanium technology. It operates from 1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode). |
| Package / case | PG-TSNP-6-2 |
| Product category | Semiconductor |
| Gain (manufacturer family record) | 15 dB |
| I (manufacturer family record) | 4.2 mA |
| IIP3 (manufacturer family record) | -3 dBm |
| NF (manufacturer family record) | 1.2 dB |
| P-1dB [in] (manufacturer family record) | -15 dBm |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.