BGAP2S20AE6327XTSA1
The BGA P2S20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.3 dB for optimum linearization results of the driven PA. </p>
Key Specifications
| Complete manufacturer part number | BGAP2S20AE6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The BGA P2S20A is a 2.3 to 2.7 GHz low-band driver amplifier that can be used as pre-driver or driver in RF applications from massive MIMO 5G base stations to small cells and access points. The SiGe based amplifier offers best RF performance and a high OP1dB: 28.9 dBm. The driver amplifier is typically placed between transceiver IC and power amplifier but can also be used as power amplifier for low power applications. The input and outputs are single-ended and internally matched to 50 Ω. The driver amplifier boasts high linearity and an excellent wide-band gain flatness of <0.3 dB for optimum linearization results of the driven PA. </p> |
| Package / case | PG-TSNP-16-13 |
| Product category | Amplifiers |
| Pins | 16 |
| Supply Voltage (manufacturer family record) | 5 V |
| In stock | 9,641 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.