BGS14PN10E6327XTSA1
The BGS14PN10 is a Single Pole Quad Throw (SP4T) <strong>high linearity, high power RF switch</strong> optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in <strong>linear performance at all signal levels</strong> and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS14PN10 <strong>enables critical band combinations for UL (B1 + B3), (B2+B4), DL-CA (B4 + B12)</strong> and SV-LTE (B5 + B13). This device handles very <strong>high transmitting signal levels of up to 38 dBm</strong>, while at the same time exhibiting low losses to conserve battery power. Ultra high linearity devices have a significant impact on <strong>system sensitivity</strong>. For instance, 3 dBm more linearity in whole RF-front-end leads to 6 dB <strong>better signal-to-noise ratio.</strong> Hence, <strong>data rate speed is improved by up to 40%</strong> allowing a step e.g. from 20 Mbps (QAM16 4/5) to 33 Mbps (QAM64 4/5). The BGS14PN10 stands for <strong>Best-in-Class ISO and IL performance</strong> across all frequencies.
Key Specifications
| Complete manufacturer part number | BGS14PN10E6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The BGS14PN10 is a Single Pole Quad Throw (SP4T) <strong>high linearity, high power RF switch</strong> optimized for mobile phone applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in <strong>linear performance at all signal levels</strong> and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The BGS14PN10 <strong>enables critical band combinations for UL (B1 + B3), (B2+B4), DL-CA (B4 + B12)</strong> and SV-LTE (B5 + B13). This device handles very <strong>high transmitting signal levels of up to 38 dBm</strong>, while at the same time exhibiting low losses to conserve battery power. Ultra high linearity devices have a significant impact on <strong>system sensitivity</strong>. For instance, 3 dBm more linearity in whole RF-front-end leads to 6 dB <strong>better signal-to-noise ratio.</strong> Hence, <strong>data rate speed is improved by up to 40%</strong> allowing a step e.g. from 20 Mbps (QAM16 4/5) to 33 Mbps (QAM64 4/5). The BGS14PN10 stands for <strong>Best-in-Class ISO and IL performance</strong> across all frequencies. |
| Package / case | PG-TSNP-10-1 |
| Product category | Semiconductor |
| Insertion Loss [@1GHz] (manufacturer family record) | 0.18 dB |
| Isolation [@1GHz] (manufacturer family record) | 41 dB |
| Supply Voltage minimum (manufacturer family record) | 1.8 V |
| Supply Voltage maximum (manufacturer family record) | 3.6 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.