BGSX33M5U16E6327XTSA1
The BGSX33M5U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This 3P3T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm.
Key Specifications
| Complete manufacturer part number | BGSX33M5U16E6327XTSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The BGSX33M5U16 RF CMOS switch is specifically designed for LTE and 5G antenna applications. This 3P3T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.0 mm and a thickness of 0.6 mm. |
| Package / case | PG-ULGA-16-5 |
| Product category | Semiconductor |
| Insertion Loss (manufacturer family record) | 0.41 dB |
| Isolation (manufacturer family record) | 45 dB |
| Pmax (manufacturer family record) | 38 dBm |
| Supply Voltage minimum (manufacturer family record) | 1.65 V |
| Supply Voltage maximum (manufacturer family record) | 1.95 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.