BGSX44MU18E6327XUSA1
The BGSX44MU18 RF CMOS switch is specifically designed for LTE and 5G FR1 four-antenna applications. This 4P4T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports.Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.4 mm and a thickness of 0.63 mm.
Key Specifications
| Complete manufacturer part number | BGSX44MU18E6327XUSA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The BGSX44MU18 RF CMOS switch is specifically designed for LTE and 5G FR1 four-antenna applications. This 4P4T cross-switch offers low insertion loss and low harmonic generation.The switch is controlled via a MIPI RFFE control interface. The on-chip controller allows power-supply voltages from 1.65 to1.95 V. The switch features direct-connect-to-battery functionality and DC-free RF ports.Unlike GaAs technology, external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. The device has a very small size of only 2.0 mm x 2.4 mm and a thickness of 0.63 mm. |
| Package / case | PG-WLGA-18-1 |
| Product category | Semiconductor |
| Isolation (manufacturer family record) | 43 dB |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.