BSZ086P03NS3EGATMA1
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
Key Specifications
| Complete manufacturer part number | BSZ086P03NS3EGATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. |
| Package / case | PG-TSDSON-8-22 |
| Product category | Semiconductor |
| Ciss (manufacturer family record) | 3190 pF |
| Coss (manufacturer family record) | 1520 pF |
| QG [typ @10V] (manufacturer family record) | 43.2 nC |
| Rth (manufacturer family record) | 1.8 K/W |
| VGS(th) (manufacturer family record) | -2.5 V |
| Voltage Class (manufacturer family record) | -30 V |
| RDS (on) maximum [@10V] (manufacturer family record) | 8.6 mΩ |
| VDS maximum (manufacturer family record) | -30 V |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.