BTS3011TEATMA1
The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3011TE is automotive qualified and is optimized for 12 V automotive and industrial applications.
Key Specifications
| Complete manufacturer part number | BTS3011TEATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The power transistor is built by an N-channel vertical power MOSFET. The device is monolithically integrated. The BTS3011TE is automotive qualified and is optimized for 12 V automotive and industrial applications. |
| Package / case | PG-TO252-5-11 |
| Product category | Power distribution switches |
| Pins | 5 |
| Channels (manufacturer family record) | 1 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 11 mΩ |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Supply Voltage minimum (manufacturer family record) | 3 V |
| Operating Temperature maximum (manufacturer family record) | 150 °C |
| RDS (on) maximum [@ Tj = 150°C] (manufacturer family record) | 22 mΩ |
| Supply Voltage maximum (manufacturer family record) | 32 V |
| VDS maximum (manufacturer family record) | 40 V |
| In stock | 2,861 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.