BTS500801TMAATMA1
The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TMA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown.
Key Specifications
| Complete manufacturer part number | BTS500801TMAATMA1 |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | The power transistor is built by a N-channel vertical power MOSFET with charge pump. The design is based on Smart SIPMOS chip on chip technology. The BTS50080-1TMA has a current controlled input and offers a diagnostic feedback with load current sense and a defined fault signal in case of overload operation, overtemperature shutdown and/or short circuit shutdown. |
| Package / case | PG-TO220-7-4 |
| Product category | Power distribution switches |
| Pins | 7 |
| Channels (manufacturer family record) | 1 |
| RDS (on) [@ Tj = 25°C] (manufacturer family record) | 7 mΩ |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Supply Voltage minimum (manufacturer family record) | 5.5 V |
| Operating Temperature maximum (manufacturer family record) | 150 °C |
| Supply Voltage maximum (manufacturer family record) | 38 V |
| In stock | 8,173 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.