CY14B101LA-BA25XI
CY14B101LA-BA25XI is a 1-Mbit (128 K × 8) parallel nvSRAM that combines SRAM with QuantumTrap nonvolatile storage in each cell. It operates from 2.7 V to 3.6 V over –40 to 85°C and supports 25 ns access. Data is automatically STORED on power-down using an external VCAP capacitor (61–180 µF) and RECALLED at power-up; it specifies 20-year retention and 1,000 K STORE endurance in a 48-ball FBGA.
Key Specifications
| Complete manufacturer part number | CY14B101LA-BA25XI |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY14B101LA-BA25XI is a 1-Mbit (128 K × 8) parallel nvSRAM that combines SRAM with QuantumTrap nonvolatile storage in each cell. It operates from 2.7 V to 3.6 V over –40 to 85°C and supports 25 ns access. Data is automatically STORED on power-down using an external VCAP capacitor (61–180 µF) and RECALLED at power-up; it specifies 20-year retention and 1,000 K STORE endurance in a 48-ball FBGA. |
| Package / case | PG-TFBGA-48-805 |
| Product category | Memory ICs |
| Pins | 48 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 4,090 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.