CY14B101LA-ZS20XI
CY14B101LA-ZS20XI is a 1-Mbit (128 K × 8) parallel nvSRAM that combines SRAM with QuantumTrap nonvolatile storage in each cell. It supports 20 ns access time and single 3 V operation (2.7 V to 3.6 V) over -40°C to 85°C. Data is AutoStored on power-down using a VCAP capacitor (61 µF to 180 µF) and Recalled on power-up or by software. Data retention is 20 years with 1 million STORE cycles.
Key Specifications
| Complete manufacturer part number | CY14B101LA-ZS20XI |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY14B101LA-ZS20XI is a 1-Mbit (128 K × 8) parallel nvSRAM that combines SRAM with QuantumTrap nonvolatile storage in each cell. It supports 20 ns access time and single 3 V operation (2.7 V to 3.6 V) over -40°C to 85°C. Data is AutoStored on power-down using a VCAP capacitor (61 µF to 180 µF) and Recalled on power-up or by software. Data retention is 20 years with 1 million STORE cycles. |
| Package / case | PG-TSOP-44-800 |
| Product category | Memory ICs |
| Pins | 44 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 3,771 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.