CY14B104NA-ZS20XIT
CY14B104NA-ZS20XIT is a 4-Mbit (256K × 16) parallel nvSRAM that combines fast SRAM with QuantumTrap non-volatile cells. It operates from 2.7 V to 3.6 V over −40°C to 85°C and delivers 20 ns access. Data is automatically STORED on power-down using a 61 µF to 180 µF VCAP capacitor, with software- or pin-initiated STORE/RECALL. Rated for 20-year retention and 1 million STORE cycles.
Key Specifications
| Complete manufacturer part number | CY14B104NA-ZS20XIT |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY14B104NA-ZS20XIT is a 4-Mbit (256K × 16) parallel nvSRAM that combines fast SRAM with QuantumTrap non-volatile cells. It operates from 2.7 V to 3.6 V over −40°C to 85°C and delivers 20 ns access. Data is automatically STORED on power-down using a 61 µF to 180 µF VCAP capacitor, with software- or pin-initiated STORE/RECALL. Rated for 20-year retention and 1 million STORE cycles. |
| Package / case | PG-TSOP-44-800 |
| Product category | Memory ICs |
| Pins | 44 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 1,102 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.