CY14B116N-BA25XI
CY14B116N-BA25XI is a 16-Mbit nvSRAM organized as 1024K × 16, combining fast SRAM with QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V over –40°C to 85°C and offers 25-ns access. Data is automatically STORED on power-down and RECALLED on power-up, with software- or pin-initiated STORE/RECALL. Sleep mode current is 10 µA max. It is supplied in a 60-ball FBGA package.
Key Specifications
| Complete manufacturer part number | CY14B116N-BA25XI |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY14B116N-BA25XI is a 16-Mbit nvSRAM organized as 1024K × 16, combining fast SRAM with QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V over –40°C to 85°C and offers 25-ns access. Data is automatically STORED on power-down and RECALLED on power-up, with software- or pin-initiated STORE/RECALL. Sleep mode current is 10 µA max. It is supplied in a 60-ball FBGA package. |
| Package / case | PG-TFBGA-60-800 |
| Product category | Semiconductor |
| Density (manufacturer family record) | 16 MBit |
| Peak Reflow Temp (manufacturer family record) | 260 °C |
| Speed (manufacturer family record) | 25 ns |
| In stock | Contact for availability |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
The complete ordering code and the fields shown come from the cited manufacturer record. Remaining specifications and product appearance await verification. Listing does not imply current production or stock availability.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.