CY14B116S-BZ25XI

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CY14B116S-BZ25XI is a 16-Mbit nvSRAM with a 512K × 32 SRAM array and QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V across -40°C to 85°C and supports 25 ns access time. Data is automatically STORED on power-down using an external VCAP capacitor (19.8 µF to 82.0 µF) and RECALLED on power-up, with hardware or software STORE/RECALL options. The -BZ25XI variant is a 165-ball FBGA.

Key Specifications

Complete manufacturer part numberCY14B116S-BZ25XI
ManufacturerInfineon Technologies
DescriptionCY14B116S-BZ25XI is a 16-Mbit nvSRAM with a 512K × 32 SRAM array and QuantumTrap nonvolatile storage. It operates from 2.7 V to 3.6 V across -40°C to 85°C and supports 25 ns access time. Data is automatically STORED on power-down using an external VCAP capacitor (19.8 µF to 82.0 µF) and RECALLED on power-up, with hardware or software STORE/RECALL options. The -BZ25XI variant is a 165-ball FBGA.
Package / casePG-BGA-165-805
Product categorynvSRAM (non-volatile SRAM)
Pins165
Operating Temperature minimum (manufacturer family record)-40 °C
Operating Temperature maximum (manufacturer family record)85 °C
Family Name (Flip Electronics public specification)CY14B116S
Interface Type (Flip Electronics public specification)Parallel
Memory Size (Flip Electronics public specification)16Mbit
Organization (Flip Electronics public specification)512k x 32
Parameter source (third-party)https://www.flipelectronics.com/Product/CY14B116S-BZ25XI-41051
In stock1,863 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Additional parameters are from Flip Electronics public product specifications matched to the complete ordering code and manufacturer. These fields are third-party data, not manufacturer-confirmed. Original fields and commercial terms are preserved.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: CY14B116S-BZ25XI
Manufacturer: Infineon Technologies
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