CY14V104NA-BA25XI
CY14V104NA-BA25XI is a 4-Mbit nvSRAM organized as 256 K × 16, combining fast SRAM with QuantumTrap nonvolatile storage per cell. It supports automatic STORE on power-down (with a VCAP capacitor) and RECALL on power-up, plus software- or pin-initiated STORE/RECALL. Operates from 3.0 V–3.6 V core and 1.65 V–1.95 V I/O at -40°C to 85°C, 25 ns access, and 20-year data retention in a 48-ball FBGA.
Key Specifications
| Complete manufacturer part number | CY14V104NA-BA25XI |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY14V104NA-BA25XI is a 4-Mbit nvSRAM organized as 256 K × 16, combining fast SRAM with QuantumTrap nonvolatile storage per cell. It supports automatic STORE on power-down (with a VCAP capacitor) and RECALL on power-up, plus software- or pin-initiated STORE/RECALL. Operates from 3.0 V–3.6 V core and 1.65 V–1.95 V I/O at -40°C to 85°C, 25 ns access, and 20-year data retention in a 48-ball FBGA. |
| Package / case | PG-TFBGA-48-805 |
| Product category | Memory ICs |
| Pins | 48 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 4,358 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.