CY15B201QSN-108SXE

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The CY15B201QSN is a 1-Mb (128K × 8) automotive-grade ferroelectric RAM (F-RAM) with instant non-volatile writes, virtually unlimited endurance of 10 trillion cycles, and 121-year data retention. It operates from 1.8 V to 3.6 V across –40°C to +125°C, supporting Quad SPI and DDR interfaces up to 108 MHz. Integrated ECC and CRC ensure robust data integrity. AEC-Q100 Grade 1 and RoHS compliance make it ideal for frequent, reliable automotive and industrial data storage.

Key Specifications

Complete manufacturer part numberCY15B201QSN-108SXE
ManufacturerInfineon Technologies
DescriptionThe CY15B201QSN is a 1-Mb (128K × 8) automotive-grade ferroelectric RAM (F-RAM) with instant non-volatile writes, virtually unlimited endurance of 10 trillion cycles, and 121-year data retention. It operates from 1.8 V to 3.6 V across –40°C to +125°C, supporting Quad SPI and DDR interfaces up to 108 MHz. Integrated ECC and CRC ensure robust data integrity. AEC-Q100 Grade 1 and RoHS compliance make it ideal for frequent, reliable automotive and industrial data storage.
Package / casePG-DSO-8-804
Product categoryMemory ICs
Pins8
Operating Temperature minimum (manufacturer family record)-40 °C
Operating Temperature maximum (manufacturer family record)125 °C
In stock8,790 pcs
Unit priceRequest a quote
Lead timeTo be confirmed

Technical documentation and image source

Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.

Some exact-order specifications remain to be confirmed in the manufacturer documentation.

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Part Number: CY15B201QSN-108SXE
Manufacturer: Infineon Technologies
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