CY62147G30-45ZSXI
CY62147G30-45ZSXI is a 4-Mbit (256K × 16) CMOS SRAM with embedded ECC for single-bit error correction. This 45 ns, 2.2 V to 3.6 V industrial-grade device supports byte writes via BLE/BHE and automatic byte power-down when both bytes are disabled. Standby current is 3.5 µA typical (8.7 µA max). It is offered in a 44-pin TSOP II (ZS) package without ERR output for parallel memory in embedded systems.
Key Specifications
| Complete manufacturer part number | CY62147G30-45ZSXI |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY62147G30-45ZSXI is a 4-Mbit (256K × 16) CMOS SRAM with embedded ECC for single-bit error correction. This 45 ns, 2.2 V to 3.6 V industrial-grade device supports byte writes via BLE/BHE and automatic byte power-down when both bytes are disabled. Standby current is 3.5 µA typical (8.7 µA max). It is offered in a 44-pin TSOP II (ZS) package without ERR output for parallel memory in embedded systems. |
| Package / case | PG-TSOP-44-800 |
| Product category | Memory ICs |
| Pins | 44 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 8,110 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.