CY62157G30-45ZSXIT
CY62157G30-45ZSXIT is an 8-Mbit (512K × 16) CMOS MoBL SRAM with embedded ECC that detects and corrects single-bit errors on accessed locations. It operates from 2.2 V to 3.6 V over -40°C to +85°C, with 45 ns access time. Standby current is specified to 6.5 µA max. Dual chip enables (CE1/CE2), byte write enables (BHE/BLE), and byte power-down standby support low-power designs in TSOP II.
Key Specifications
| Complete manufacturer part number | CY62157G30-45ZSXIT |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY62157G30-45ZSXIT is an 8-Mbit (512K × 16) CMOS MoBL SRAM with embedded ECC that detects and corrects single-bit errors on accessed locations. It operates from 2.2 V to 3.6 V over -40°C to +85°C, with 45 ns access time. Standby current is specified to 6.5 µA max. Dual chip enables (CE1/CE2), byte write enables (BHE/BLE), and byte power-down standby support low-power designs in TSOP II. |
| Package / case | PG-TSOP-44-800 |
| Product category | Memory ICs |
| Pins | 44 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 85 °C |
| In stock | 12,624 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.