CY7C1061G30-10BV1XET
CY7C1061G30-10BV1XET is a 16-Mbit (1 M × 16) asynchronous CMOS SRAM with embedded ECC for automotive use. It operates from 2.2 V to 3.6 V over −40°C to 125°C and supports 10 ns access time (tAA) and 10 ns read/write cycle time (tRC/tWC). ECC detects and corrects single-bit read errors. BLE/BHE enable upper/lower byte writes with CE, OE, and WE control. It is supplied in a Pb-free 48-ball VFBGA.
Key Specifications
| Complete manufacturer part number | CY7C1061G30-10BV1XET |
|---|---|
| Manufacturer | Infineon Technologies |
| Description | CY7C1061G30-10BV1XET is a 16-Mbit (1 M × 16) asynchronous CMOS SRAM with embedded ECC for automotive use. It operates from 2.2 V to 3.6 V over −40°C to 125°C and supports 10 ns access time (tAA) and 10 ns read/write cycle time (tRC/tWC). ECC detects and corrects single-bit read errors. BLE/BHE enable upper/lower byte writes with CE, OE, and WE control. It is supplied in a Pb-free 48-ball VFBGA. |
| Package / case | PG-VFBGA-48-800 |
| Product category | Memory ICs |
| Pins | 48 |
| Operating Temperature minimum (manufacturer family record) | -40 °C |
| Operating Temperature maximum (manufacturer family record) | 125 °C |
| In stock | 8,742 pcs |
| Unit price | Request a quote |
| Lead time | To be confirmed |
Technical documentation and image source
Available manufacturer parameters matched to the complete ordering code. Historical captures may be used. Parameter verification does not certify product photography or current stock; consult the linked datasheet for conditions.
Some exact-order specifications remain to be confirmed in the manufacturer documentation.